In situ monitoring of floating-zone-grown Si(111) crystal structure using the behavior of ridgelike protrusions

被引：5

作者：

Fritzler, K. B. ^{[1
]}

Trukhanov, E. M. ^{[1
]}

Kalinin, V. V. ^{[1
]}

Smirnov, P. L. ^{[1
]}

Kolesnikov, A. V. ^{[1
]}

Vasilenko, A. P. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Siberian Div, Novosibirsk 630090, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2007年 / 33卷 / 06期

关键词：

81.10.Aj; 81.10.Fq;

D O I：

10.1134/S1063785007060223

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The morphology of the side surface of floating-zone (FZ) single crystal silicon ingots with diameters up to 125 mm grown in the [7 11] direction on an FZ-20 (Haldor Topse) puller have been studied. The geometry and morphology of ridgelike protrusions (RPs) most frequently observed on the FZ-grown [111]-oriented Si ingots are described for the first time. Analysis of these data allowed RPs corresponding to the octahedral and rhombododecahedral growth habit to be identified among the variety of protrusions. The critical ingot diameters are established, above which the rhombododecahedral RPs appear on dislocation-free crystal ingots. The presence of such RPs can be used for in situ monitoring of the structural state of FZ silicon.

引用

页码：521 / 523

页数：3