On the Multiplicative Degree-Based Topological Indices of Silicon-Carbon Si2C3-I[p,q] and Si2C3-II[p,q]

被引：33

作者：

Kwun, Young Chel ^{[1
]}

Virk, Abaid Ur Rehman ^{[2
]}

Nazeer, Waqas ^{[3
]}

Rehman, M. A. ^{[2
]}

Kang, Shin Min ^{[4
,5
,6
]}

机构：

[1] Dong A Univ, Dept Math, Busan 49315, South Korea

[2] Univ Management & Technol, Dept Math, Lahore 54000, Pakistan

[3] Univ Educ, Dept Math, Div Sci & Technol, Lahore 54000, Pakistan

[4] Gyeongsang Natl Univ, Dept Math, Jinju 52828, South Korea

[5] Gyeongsang Natl Univ, Res Inst Nat Sci, Jinju 52828, South Korea

[6] China Med Univ, Ctr Gen Educ, Taichung 40402, Taiwan

来源：

SYMMETRY-BASEL | 2018年 / 10卷 / 08期

关键词：

molecular graph; degree-based index; silicon-carbon; CONNECTIVITY INDEX; ZAGREB INDEXES; RANDIC INDEX; GRAPH-THEORY; MOLECULAR-ORBITALS;

D O I：

10.3390/sym10080320

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

The application of graph theory in chemical and molecular structure research has far exceeded people's expectations, and it has recently grown exponentially. In the molecular graph, atoms are represented by vertices and bonds by edges. Topological indices help us to predict many physico-chemical properties of the concerned molecular compound. In this article, we compute Generalized first and multiplicative Zagreb indices, the multiplicative version of the atomic bond connectivity index, and the Generalized multiplicative Geometric Arithmetic index for silicon-carbon Si2C3-I[p,q] and Si2C3-II[p,q] second.

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