Fully Overheated Single-Electron Transistor

被引：22

作者：

Laakso, M. A. ^{[1
]}

Heikkila, T. T. ^{[1
]}

Nazarov, Yuli V. ^{[2
]}

机构：

[1] Aalto Univ, Low Temp Lab, FI-00076 Aalto, Finland

[2] Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands

来源：

PHYSICAL REVIEW LETTERS | 2010年 / 104卷 / 19期

基金：

芬兰科学院;

关键词：

TUNNEL-JUNCTIONS; THERMOMETRY;

D O I：

10.1103/PhysRevLett.104.196805

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We consider the fully overheated single- electron transistor, where the heat balance is determined entirely by electron transfers. We find three distinct transport regimes corresponding to cotunneling, single- electron tunneling, and a competition between the two. We find an anomalous sensitivity to temperature fluctuations at the crossover between the two latter regimes that manifests in an exceptionally large Fano factor of current noise.

引用

页数：4

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