Transparent silica films deposited by low-temperature plasma-enhanced CVD using hexamethyldisiloxane

被引：0

作者：

Teshima, K

Inoue, Y

Sugimura, H

Takai, O

机构：

[1] Nagoya Univ, Grad Sch Engn, Dept Mat Proc Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[2] Nagoya Univ, Res Ctr Nucl Mat Recycle, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[3] Dai Nippon Printing Co Ltd, Ctr Res & Dev, Adv Technol Lab, Kashiwa, Chiba 2770871, Japan

来源：

CHEMICAL VAPOR DEPOSITION | 2002年 / 8卷 / 06期

关键词：

D O I：

10.1002/1521-3862(20021203)8:6<251::AID-CVDE251>3.0.CO;2-3

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Communication: High-purity silica films have been-deposited at low substrate temperature by inductively coupled radiofrequency plasma-enhanced CVD using hexamethyldisiloxane add oxygen. Effects of deposition conditions on film composition are investigated. High-quality silica films are obtained under optimal deposition conditions of total pressure of 10 Pa and oxygen fraction of 76 % (see Figure).

引用

收藏

页码：251 / +

页数：4

相关论文

共 30 条

[1] A study of HMDSO/O2 plasma deposits using a high-sensitivity and -energy resolution XPS instrument:: curve fitting of the Si 2p core level [J].

Alexander, MR ;

Short, RD ;

Jones, FR ;

Michaeli, W ;

Blomfield, CJ .

APPLIED SURFACE SCIENCE, 1999, 137 (1-4) :179-183

[2] Chemical stability of Sin+ species in SiOx (x<2) thin films [J].

Barranco, A ;

Mejías, JA ;

Espinós, JP ;

Caballero, A ;

González-Elipe, AR ;

Yubero, F .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2001, 19 (01) :136-144

[3] LOW-TEMPERATURE DEPOSITION OF HIGH-QUALITY SILICON DIOXIDE BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION [J].

BATEY, J ;

TIERNEY, E .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (09) :3136-3145

[4] PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF SIO2 USING NOVEL ALKOXYSILANE PRECURSORS [J].

BOGART, KHA ;

DALLESKA, NF ;

BOGART, GR ;

FISHER, ER .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1995, 13 (02) :476-480

[5] Growth and structure of hyperthin SiO2 coatings on polymers [J].

Dennler, G ;

Houdayer, A ;

Ségui, Y ;

Wertheimer, MR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2001, 19 (05) :2320-2327

[6] LOW-TEMPERATURE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF SIO2 [J].

DESHMUKH, SC ;

AYDIL, ES .

APPLIED PHYSICS LETTERS, 1994, 65 (25) :3185-3187

[7] SiOx gas barrier coatings on polymer substrates:: Morphology and gas transport considerations [J].

Erlat, AG ;

Spontak, RJ ;

Clarke, RP ;

Robinson, TC ;

Haaland, PD ;

Tropsha, Y ;

Harvey, NG ;

Vogler, EA .

JOURNAL OF PHYSICAL CHEMISTRY B, 1999, 103 (29) :6047-6055

[8] Study of surface reactions during plasma enhanced chemical vapor deposition of SiO2 from SiH4, O-2, and Ar plasma [J].

Han, SM ;

Aydil, ES .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1996, 14 (04) :2062-2070

[9] VIBRATIONAL PROPERTIES OF SIO AND SIH IN AMORPHOUS SIOX-H FILMS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-2.0) PREPARED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION [J].

HE, L ;

INOKUMA, T ;

KURATA, Y ;

HASEGAWA, S .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1995, 185 (03) :249-261

[10] DEPOSITION OF PLASMA SILICON-OXIDE THIN-FILMS IN A PRODUCTION PLANAR REACTOR [J].

HOLLAHAN, JR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (06) :930-934