Snowplow effect and reactive diffusion in the Pt doped Ni-Si system

被引:52
作者
Cojocaru-Miredin, O.
Mangelinck, D.
Hoummada, K.
Cadel, E.
Blavette, D.
Deconihout, B.
Perrin-Pellegrino, C.
机构
[1] Univ Cezanne, Fac Tech Sci, CNRS, Lab Mat Microelect Provence,UMR 6137, F-13397 Marseille, France
[2] Univ Rouen, CNRS, UMR 6634, Grp Phys Mat, F-76801 St Etienne, France
关键词
atom-probe field-ion microscopy; transition metal silicides; interface segregation; interface migration; thin films;
D O I
10.1016/j.scriptamat.2007.05.007
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The redistribution of Pt after heat treatment at 290 degrees C for 1h has been analyzed by large-angle atom probe tomography assisted by femtosecond laser pulses. Two silicides Ni2Si and NiSi were found together with the solid solution of Ni and Pt. The redistribution of Pt at the Ni1-xPtx/Ni2Si interface is a clear illustration of the snowplow effect. A segregation of Pt at the Ni2Si/NiSi interface has been observed and is attributed to interfacial segregation. (c) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:373 / 376
页数:4
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