Lithography-free fabrication of graphene devices

被引：48

作者：

Staley, N. ^{[1
]}

Wang, H.

Puls, C.

Forster, J.

Jackson, T. N.

McCarthy, K.

Clouser, B.

Liu, Y.

机构：

[1] Penn State Univ, Dept Phys, University Pk, PA 16802 USA

[2] Penn State Univ, Dept Elect Engn, University Pk, PA 16802 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 14期

关键词：

D O I：

10.1063/1.2719607

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed a lithography-free, all-dry process for fabricating graphene devices using an ultrathin quartz filament as a shadow mask. This technique, which is free of the possible contamination of graphene during lithographic process, is simple to implement, versatile, and capable of achieving high throughput. We prepared devices for electrical transport as well as planar tunnel junction studies of n-layer graphene (nLG), with n=1,2,3, and higher using this technique. We observed possible weak localization behavior and an apparent reduction of density of states near the Fermi energy in nLG. (c) 2007 American Institute of Physics.

引用

页数：3

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