Irradiated Silicon for Microwave and Millimeter Wave Applications

被引：3

作者：

Krupka, Jerzy ^{[1
]}

Salski, Bartlomiej ^{[2
]}

Karpisz, Tomasz ^{[2
]}

Kopyt, Pawel ^{[2
]}

Jensen, Leif ^{[3
]}

Wojciechowski, Marcin ^{[4
]}

机构：

[1] Warsaw Univ Technol, Inst Microelect & Optoelect, PL-00661 Warsaw, Poland

[2] Warsaw Univ Technol, Inst Radioelect & Multimedia Technol, PL-00661 Warsaw, Poland

[3] Topsil Semicond Mat AS, DK-3600 Frederikssund, Denmark

[4] Cent Off Measures, PL-00139 Warsaw, Poland

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2022年 / 32卷 / 06期

关键词：

Microwave measurement; millimeter wave measurement; permittivity; silicon; FAR-INFRARED ABSORPTION; COMPLEX PERMITTIVITY; ELECTRICAL-PROPERTIES; HIGH-RESISTIVITY; GHZ;

D O I：

10.1109/LMWC.2022.3161393

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Complex permittivity measurements of irradiated high-resistivity float-zone silicon have been performed in this letter from microwave to millimeter- wave frequencies employing three different resonance techniques. It has been proven that the irradiated silicon exhibits resistivity of the intrinsic silicon at temperatures larger than 295 K and the loss tangent due to phonon absorption reaches about 10(-5) at room temperature. The total loss tangent of the room-temperature irradiated silicon is smaller than 6 x 10(-5) at frequencies larger than 5 GHz. The real part of the complex permittivity of silicon linearly increases with temperature for T > 200 K.

引用

页码：700 / 703

页数：4

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