Special Issue "Fundamentals and Recent Advances in Epitaxial Graphene on SiC"

被引：4
作者：
Shtepliuk, Ivan [1 ]
Yakimova, Rositsa [1 ]
机构：
[1] Linkoping Univ, Dept Phys Chem & Biol IFM, Semicond Mat, SE-58183 Linkoping, Sweden
来源：
APPLIED SCIENCES-BASEL | 2021年 / 11卷 / 08期
关键词：
epitaxial graphene; sublimation; SiC; buffer layer; electronic properties; material engineering; deposition;
D O I：
10.3390/app11083381
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
The aim of this Special Issue is to provide a scientific platform for recognized experts in the field of epitaxial graphene on SiC to present their recent studies towards a deeper comprehension of growth mechanisms, property engineering and device processing. This Special Issue gives readers the possibility to gain new insights into the nature of buffer layer formation, control of electronic properties of graphene and usage of epitaxial graphene as a substrate for deposition of different substances, including metals and insulators. We believe that the papers published within the current Special Issue develop cumulative knowledge on matters related to device-quality epaxial graphene on SiC, bringing this material closer to realistic practical applications.
引用
收藏
页数：4
相关论文
共 7 条
  • [1] Atomic Layer Deposition of High-k Insulators on Epitaxial Graphene: A Review
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    Schiliro, Emanuela
    Lo Nigro, Raffaella
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    Yakimova, Rositsa
    [J]. APPLIED SCIENCES-BASEL, 2020, 10 (07):
  • [2] Structural Modifications in Epitaxial Graphene on SiC Following 10 keV Nitrogen Ion Implantation
    Kaushik, Priya Darshni
    Yazdi, Gholam Reza
    Lakshmi, Garimella Bhaskara Venkata Subba
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    Syvajarvi, Mikael
    [J]. APPLIED SCIENCES-BASEL, 2020, 10 (11):
  • [3] Raman 2D Peak Line Shape in Epigraphene on SiC
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    Rejhon, Martin
    [J]. APPLIED SCIENCES-BASEL, 2020, 10 (07):
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    Gaskill, D. Kurt
    Iacopi, Francesca
    [J]. APPLIED SCIENCES-BASEL, 2020, 10 (12): : 1 - 32
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    Shtepliuk, Ivan
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    Yakimova, Rositsa
    [J]. APPLIED SCIENCES-BASEL, 2020, 10 (04):
  • [6] Critical View on Buffer Layer Formation and Monolayer Graphene Properties in High-Temperature Sublimation
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    Armakavicius, Nerijus
    Bouhafs, Chamseddine
    Coletti, Camilla
    Kuhne, Philipp
    Ivanov, Ivan G.
    Zakharov, Alexei A.
    Yakimova, Rositsa
    Darakchieva, Vanya
    [J]. APPLIED SCIENCES-BASEL, 2021, 11 (04): : 1 - 16
  • [7] Twistronics in Graphene, from Transfer Assembly to Epitaxy
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    Pan, Yi
    Min, Tai
    [J]. APPLIED SCIENCES-BASEL, 2020, 10 (14):
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