Dark current analysis of InAs/GaSb superlattices at low temperatures

被引：61

作者：

Nguyen, Jean ^{[1
]}

Ting, David Z. ^{[1
]}

Hill, Cory J. ^{[1
]}

Soibel, Alexander ^{[1
]}

Keo, Sam A. ^{[1
]}

Gunapala, Sarath D. ^{[1
]}

机构：

[1] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA

来源：

INFRARED PHYSICS & TECHNOLOGY | 2009年 / 52卷 / 06期

基金：

美国国家航空航天局;

关键词：

Infrared detector; Superlattices; Dark current; DETECTORS;

D O I：

10.1016/j.infrared.2009.05.022

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A limitation to the advancement of the strained-layer superlattice technology for infrared detection is unwanted high dark currents and low R(0)A values, especially at long-wavelengths. In this paper, we discuss dark current characteristics of LWIR InAs/GaSb type-II superlattice detectors. Comparing devices with different dominant mechanisms, a more thorough analysis at low temperatures is provided. (C) 2009 Published by Elsevier B.V.

引用

页码：317 / 321

页数：5

共 13 条

[1]

CABINSKI W, 2005, P SOC PHOTO-OPT INS, V5406, P184

[2]

DAVID R, 2009, INFRARED PHYS TECHN, V52, P304

[3]

DAVID ZY, 2009, INFRARED PHYS TECHN, V52, P294

[4] Modeling of electrical characteristics of midwave type II InAs/GaSb strain layer superlattice diodes [J].