Resistance switching behaviors of amorphous (ZrTiNi)Ox films for nonvolatile memory devices

被引：1
作者：
Yang, Hsiao-Ching [1 ]
Wang, Sea-Fue [1 ]
Chu, Jinn P. [2 ]
机构：
[1] Natl Taipei Univ Technol, Dept Mat & Mineral Resources Engn, Taipei 106, Taiwan
[2] Natl Taiwan Univ Sci & Technol, Dept Mat Sci & Engn, Taipei 106, Taiwan
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2014年 / 32卷 / 06期
关键词：
THERMAL-TREATMENT; RESET STATISTICS; MECHANISMS;
D O I：
10.1116/1.4896329
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this study, the resistive switching characteristics of a multicomponent oxide (ZrTiNi)O-x film with a thickness of 50 nm for resistive random access memory applications are investigated and discussed, and are intended to be used to complement the studies of simple and binary oxides reported in the literature. Analysis reveals that the deposited films are amorphous and highly oxygen-deficient (ZrTiNi)O-x with a chemical formula of (Zr0.74Ti0.15Ni0.11)O-1.12 square(0.78) in which the concentration of the existing oxygen vacancies are found to be 41% of the total oxygen ion sites. The prepared Pt/(ZrTiNi)O-x/Pt device exhibits excellent unipolar switching behavior marked with a substantial resistance ratio (larger than 10(2)), good endurance, and long retention time. The low resistance state exhibits a linear ohmic behavior as a result of the conductive filament of the aligned oxygen vacancies, while the high resistance state conduction contributes to the space-charge-limited current conduction mechanism. (C) 2014 American Vacuum Society.
引用
收藏
页数：6
相关论文
共 35 条
[1]   Random circuit breaker network model for unipolar resistance switching [J].
Chae, Seung Chul ;
Lee, Jae Sung ;
Kim, Sejin ;
Lee, Shin Buhm ;
Chang, Seo Hyoung ;
Liu, Chunli ;
Kahng, Byungnam ;
Shin, Hyunjung ;
Kim, Dong-Wook ;
Jung, Chang Uk ;
Seo, Sunae ;
Lee, Myoung-Jae ;
Noh, Tae Won .
ADVANCED MATERIALS, 2008, 20 (06) :1154-+
[2]   Resistive switching behavior of a thin amorphous rare-earth scandate: Effects of oxygen content [J].
Chang, W. Z. ;
Chu, J. P. ;
Wang, S. F. .
APPLIED PHYSICS LETTERS, 2012, 101 (01)
[3]   Resistive switching characteristics of NiO films deposited on top of W or Cu pillar bottom electrodes [J].
Dumas, C. ;
Deleruyelle, D. ;
Demolliens, A. ;
Muller, Ch. ;
Spiga, S. ;
Cianci, E. ;
Fanciulli, M. ;
Tortorelli, I. ;
Bez, R. .
THIN SOLID FILMS, 2011, 519 (11) :3798-3803
[4]   Influence of thermal treatment on the resistance switching of SrTiO3:Nb single crystal [J].
Gao, Q. Q. ;
Chen, B. ;
Yu, Q. Y. ;
Zhang, X. T. ;
Zhu, H. .
JOURNAL OF ALLOYS AND COMPOUNDS, 2013, 569 :62-66
[5]   Effects of anode materials on resistive characteristics of NiO thin films [J].
Jia, Ze ;
Wang, Linkai ;
Zhang, Naiwen ;
Ren, Tianling ;
Liou, Juin J. .
APPLIED PHYSICS LETTERS, 2013, 102 (04)
[6]   Reproducible resistance switching for BaTiO3 thin films fabricated by RF-magnetron sputtering [J].
Jung, Chang Hwa ;
Woo, Seong Ihl ;
Kim, Yun Seok ;
No, Kwang Soo .
THIN SOLID FILMS, 2011, 519 (10) :3291-3294
[7]   Improvement of resistive memory switching in NiO using IrO2 [J].
Kim, D. C. ;
Lee, M. J. ;
Ahn, S. E. ;
Seo, S. ;
Park, J. C. ;
Yoo, I. K. ;
Baek, I. G. ;
Kim, H. J. ;
Yim, E. K. ;
Lee, J. E. ;
Park, S. O. ;
Kim, H. S. ;
Chung, U-In ;
Moon, J. T. ;
Ryu, B. I. .
APPLIED PHYSICS LETTERS, 2006, 88 (23)
[8]   Study on the dynamic resistance switching properties of NiO thin films [J].
Kuegeler, C. ;
Weng, R. ;
Schroeder, H. ;
Symanczyk, R. ;
Majewski, P. ;
Ufert, K. -D. ;
Waser, R. ;
Kund, M. .
THIN SOLID FILMS, 2010, 518 (08) :2258-2260
[9]   Ti-O Binding States of Resistive Switching TiO2 Thin Films Prepared by Reactive Magnetron Sputtering [J].
Lee, Kwang Bae ;
Lee, Kyung Haeng ;
Cha, Jeong Ok ;
Ahn, Jeung Sun .
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2008, 53 (04) :1996-2001
[10]   Impact of dielectric crystallinity on the resistive switching characteristics of ZrTiOx-based metal-insulator-metal devices [J].
Lin, Chia-Chun ;
Wu, Yung-Hsien ;
Hung, Tung-Hsuan ;
Hou, Chin-Yao .
MICROELECTRONIC ENGINEERING, 2013, 109 :374-377
1234