Thickness effect on electrical properties of Pb(Zr0.52Ti0.48)O3 thick films embedded with ZnO nanowhiskers prepared by a hybrid sol-gel route

被引:27
|
作者
Zhao, Q. L. [1 ]
Cao, M. S. [1 ]
Yuan, J. [2 ]
Lu, R. [1 ]
Wang, D. W. [1 ]
Zhang, D. Q. [3 ]
机构
[1] Beijing Inst Technol, Sch Mat Sci & Engn, Beijing 100081, Peoples R China
[2] Cent Univ Nationalities, Coll Informat Engn, Beijing 100081, Peoples R China
[3] Qiqihar Univ, Coll Chem Engn, Qiqihar 161006, Peoples R China
基金
中国国家自然科学基金;
关键词
Ferroelectrics; Sol-gel preparation; Thick films; Electrical properties; ZIRCONATE-TITANATE FILMS; PIEZOELECTRIC PROPERTIES; NANOCOMPOSITES; FABRICATION;
D O I
10.1016/j.matlet.2009.12.028
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Silicon-based lead zirconate titanate thick films embedded with zinc oxide nanowhiskers (ZnOw-PZT) were prepared by a hybrid sol-gel route. ZnOw-PZT films with thickness from 1.5 mu m to 4 mu m are perovskite structure and have smooth Surface without ally Cracks. As the thickness increases, the remanent polarization and dielectric constant increase, but the coercive held and tetragonality decrease. Compared with PZT films, the ZnOw-PZT film has the close tetragonality and electrical properties which are different from those of bulk PZT-based ceramic doped with ZnO powder. The thickness dependences of the ferroelectric and dielectric properties are attributed to the relaxation of internal stress. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:632 / 635
页数:4
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