Nanoindentation of Si1-xGex thin films prepared by biased target ion beam deposition

被引：0

作者：

Ge, Ruijing ^{[1
,2
]}

Hou, Xiaowei ^{[1
,3
]}

Brookshire, Kirsten ^{[1
]}

Krishnan, N. Radha ^{[1
]}

Silva, Dilusha ^{[1
]}

Bumgarner, John ^{[1
]}

Liu, Yinong ^{[4
]}

Faraone, Lorenzo ^{[1
]}

Martyniuk, Mariusz ^{[1
]}

机构：

[1] Univ Western Australia, Sch Elect Elect & Comp Engn, 35 Stirling Highway, Crawley, WA 6009, Australia

[2] Univ Sci & Technol China, Sch Gifted Young, Hefei 230026, Anhui, Peoples R China

[3] Northwestern Polytech Univ, Sch Elect & Informat, Xian 710072, Peoples R China

[4] Univ Western Australia, Sch Mech & Chem Engn, Crawley, WA 6009, Australia

来源：

2014 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES (COMMAD 2014) | 2014年

关键词：

amorphous silicon; BTIBD; germanium; hardness; nanoindentation; young's modulus; MICROCRYSTALLINE SILICON; ELASTIC-MODULUS; GERMANIUM; INDENTATION; HARDNESS; GROWTH;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The mechanical properties of Si1-xGex thin films are studied via nanoindentation. The Si1-xGex thin films are prepared with a biased target ion beam deposition (BTIBD) method. We investigate the effect of varying the Si to Ge composition ratio on the elastic modulus and hardness of the resulting alloyed films. In comparison to pure BTIBD Si (E-Si = 154GPa, H-Si = 9.9GPa), for Si1-xGex a decreasing trend in Young's modulus and hardness is observed to be associated with the increase in Ge content, and for Si0.5Ge0.5 the values of 139 GPa and 8.4GPa are found to represent the Young's modulus and hardness, respectively.

引用

页码：210 / 213

页数：4

共 18 条

[1] HETEROEPITAXY OF GERMANIUM THIN-FILMS ON SILICON BY ION SPUTTERING [J].

ALEKSANDROV, LN ;

LOVYAGIN, RN ;

PCHELYAKOV, OP ;

STENIN, SI .

JOURNAL OF CRYSTAL GROWTH, 1974, 24 (OCT) :298-301

[2] ANALYSIS OF ELASTIC AND PLASTIC-DEFORMATION ASSOCIATED WITH INDENTATION TESTING OF THIN-FILMS ON SUBSTRATES [J].

BHATTACHARYA, AK ;

NIX, WD .

INTERNATIONAL JOURNAL OF SOLIDS AND STRUCTURES, 1988, 24 (12) :1287-1298

[3] Structural, optical and electrical properties of hydrogenated amorphous silicon germanium (a-Si1-xGex) deposited by DC magnetron sputtering at high rate [J].

Fedala, A. ;

Cherfi, R. ;

Aoucher, M. ;

Mohammed-Brahim, T. .

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2006, 9 (4-5) :690-693

[4] MOBILITY OF ELECTRONS IN GERMANIUM-SILICON ALLOYS [J].

GLICKSMAN, M .

PHYSICAL REVIEW, 1958, 111 (01) :125-128

[5] A simple indentation stress-strain relation for contacts with spheres on bilayer structures [J].

Hu, XZ ;

Lawn, BR .

THIN SOLID FILMS, 1998, 322 (1-2) :225-232

[6] Evaluation of elastic modulus and hardness of thin films by nanoindentation [J].

Jung, YG ;

Lawn, BR ;

Martyniuk, M ;

Huang, H ;

Hu, XZ .

JOURNAL OF MATERIALS RESEARCH, 2004, 19 (10) :3076-3080

[7]

Krel R. N., 2010, INT J PHYS SCI, V5, P675

[8]

Krishnan N.R., C OPT MICR MAT DEV P, P95

[9] Elasto-plastic characterisation of low-temperature plasma-deposited silicon nitride thin films using nanoindentation [J].

Martyniuk, Mariusz ;

Musca, Charles A. ;

Dell, John M. ;

Elliman, Robert G. ;

Faraone, Lorenzo .

INTERNATIONAL JOURNAL OF SURFACE SCIENCE AND ENGINEERING, 2009, 3 (1-2) :3-22

[10] GERMANIUM AND SILICON ION-BEAM DEPOSITION [J].

MIYAKE, K ;

TOKUYAMA, T .

THIN SOLID FILMS, 1982, 92 (1-2) :123-129

← 1 2 →