Compact nanoarchitectures of lead selenide via successive ionic layer adsorption and reaction towards optoelectronic devices

被引：16

作者：

Bhat, T. S. ^{[1
]}

Vanalakar, S. A. ^{[2
]}

Devan, R. S. ^{[3
]}

Mali, S. S. ^{[4
]}

Pawar, S. A. ^{[5
]}

Ma, Y. R. ^{[6
]}

Hong, C. K. ^{[4
]}

Kim, J. H. ^{[5
]}

Patil, P. S. ^{[1
]}

机构：

[1] Shivaji Univ, Dept Phys, Thin Film Mat Lab, Kolhapur 416004, Maharashtra, India

[2] Sci Commerce & Educ Coll, Karmveer Hire Arts, Dept Sci, Kolhapur 416209, Maharashtra, India

[3] Savitribai Phule Pune Univ, Dept Phys, Pune 411007, Maharashtra, India

[4] Chonnam Natl Univ, Sch Appl Chem Engn, Polymer Energy Mat Lab, Kwangju 500757, South Korea

[5] Chonnam Natl Univ, Dept Mat Sci & Engn, Kwangju 500757, South Korea

[6] Natl Dong Hwa Univ, Dept Phys, Hualien 97401, Taiwan

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2016年 / 27卷 / 05期

关键词：

PBSE THIN-FILMS; SONOCHEMICAL METHOD; EPITAXIAL-GROWTH; SHAPE; SEMICONDUCTOR; NANOCRYSTALS; DEPOSITION; PERFORMANCE; GENERATION; MECHANISM;

D O I：

10.1007/s10854-016-4386-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin films of Lead Selenide (PbSe) having compact nanoarchitectures were synthesized by a facile and cost-efficient successive ionic layer adsorption and reaction (SILAR) technique. The structural, morphological, optical and compositional properties were studied using X-ray diffraction (XRD), Field emission scanning electron microscopy (FESEM), Transmission electron microscopy (TEM), UV-vis spectrophotometer, and X-ray photoelectron spectroscopy (XPS) techniques. Moreover, the effect of SILAR cycles on the morphology of PbSe thin films was investigated. XRD patterns revealed the formation of crystalline PbSe with the cubic crystal structure. FESEM images show shape evolution from nanoparticulate to merged pyramidal-like structure with variation in size from similar to 200 to 430 nm. The optical direct band gap energy of PbSe were varies from 1.32 to 1.20 eV with the increase in deposition cycles. The HRTEM and SAED results show the crystalline nature of the sample which is in good agreement with the XRD. The electrical characterizations were performed in order to obtain the ohmic behavior in the metal-semiconductor interface. The deposited thin films show a good ohmic behavior.

引用

页码：4996 / 5005

页数：10

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