Electronic structure of substitutionally doped diamond: Spin-polarized, hybrid density functional theory analysis

被引:33
作者
Czelej, Kamil [1 ]
Spiewak, Piotr [1 ]
Kurzydlowski, Krzysztof J. [1 ]
机构
[1] Warsaw Univ Technol, Fac Mat Sci & Engn, Woloska 141, PL-02507 Warsaw, Poland
关键词
N-TYPE DIAMOND; FABRICATION; PHOSPHORUS; NITROGEN; DOPANTS; SULFUR;
D O I
10.1016/j.diamond.2017.03.009
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Individual substitutional defects in diamond have been theoretically investigated using spin-polarized, hybrid density functional theory method. The revised Heyd-Scuseria-Ernzerhof screened hybrid functional (HSE06) was applied for the total energy calculation. We analyzed the equilibrium geometry, formation energy as a function of charge state and defect charge transition levels, in order to predict the relative stability and doping nature of each defect. Calculations revealed that the crystal radius cannot be solely used to anticipate trend in the volume relaxation and subsequently defect formation energy. A thorough analysis of formation energy vs Fermi level diagrams indicate that none of the investigated elements can individually generate a shallow acceptor or donor level, competitive with substitutional B and P. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:146 / 151
页数:6
相关论文
共 45 条
  • [11] Diamond Junction Field-Effect Transistors with Selectively Grown n+-Side Gates
    Iwasaki, Takayuki
    Hoshino, Yuto
    Tsuzuki, Kohei
    Kato, Hiromitsu
    Makino, Toshiharu
    Ogura, Masahiko
    Takeuchi, Daisuke
    Matsumoto, Tsubasa
    Okushi, Hideyo
    Yamasaki, Satoshi
    Hatano, Mutsuko
    [J]. APPLIED PHYSICS EXPRESS, 2012, 5 (09)
  • [12] NITROGEN AND POTENTIAL NORMAL-TYPE DOPANTS IN DIAMOND
    KAJIHARA, SA
    ANTONELLI, A
    BERNHOLC, J
    CAR, R
    [J]. PHYSICAL REVIEW LETTERS, 1991, 66 (15) : 2010 - 2013
  • [13] Is sulfur a donor in diamond?
    Kalish, R
    Reznik, A
    Uzan-Saguy, C
    Cytermann, C
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (06) : 757 - 759
  • [14] Doping of diamond
    Kalish, R
    [J]. CARBON, 1999, 37 (05) : 781 - 785
  • [15] Diamond-based RF power transistors: Fundamentals and applications
    Kasu, M.
    Ueda, K.
    Yamauchi, Y.
    Tallaire, A.
    Makimoto, T.
    [J]. DIAMOND AND RELATED MATERIALS, 2007, 16 (4-7) : 1010 - 1015
  • [16] Codoping method for the fabrication of low-resistivity wide band-gap semiconductors in p-type GaN, p-type AlN and n-type diamond: prediction versus experiment
    Katayama-Yoshida, H
    Nishimatsu, T
    Yamamoto, T
    Orita, N
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2001, 13 (40) : 8901 - 8914
  • [17] Fabrication of bipolar junction transistor on (001)-oriented diamond by utilizing phosphorus-doped n-type diamond base
    Kato, Hiromitsu
    Makino, Toshiharu
    Ogura, Masahiko
    Takeuchi, Daisuke
    Yamasaki, Satoshi
    [J]. DIAMOND AND RELATED MATERIALS, 2013, 34 : 41 - 44
  • [18] Spontaneous symmetry breaking of acceptors in "Blue" diamonds
    Kim, HJ
    Ramdas, AK
    Rodriguez, S
    Grimsditch, M
    Anthony, TR
    [J]. PHYSICAL REVIEW LETTERS, 1999, 83 (20) : 4140 - 4143
  • [19] n-type doping of diamond
    Koizumi, Satoshi
    Suzuki, Mariko
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2006, 203 (13): : 3358 - 3366
  • [20] Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
    Kresse, G
    Furthmuller, J
    [J]. PHYSICAL REVIEW B, 1996, 54 (16): : 11169 - 11186