Low-temperature Hall effect in substituted Sr2RuO4 -: art. no. 174501

被引：9

作者：

Kikugawa, N ^{[1
]}

Mackenzie, AP

Bergemann, C

Maeno, Y

机构：

[1] Univ St Andrews, Sch Phys & Astron, St Andrews KY16 9SS, Fife, Scotland

[2] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

[3] Kyoto Univ, Int Innovat Ctr, Kyoto 6068501, Japan

[4] Kyoto Univ, Dept Phys, Kyoto 6068502, Japan

来源：

PHYSICAL REVIEW B | 2004年 / 70卷 / 17期

基金：

日本学术振兴会;

关键词：

D O I：

10.1103/PhysRevB.70.174501

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the results of a study of the Hall effect and magnetoresistance in single crystals of Sr2RuO4 in which Sr2+ has been substituted by La3+ (Sr2-yLayRuO4) or Ru4+ by Ti4+ (Sr2Ru1-xTixO4). For undoped Sr2RuO4, the purity is so high that the strong-field Hall coefficient can be measured for fields above 4 T. The conventional weak-field Hall coefficient as a function of doping shows a sharp jump and sign change at ysimilar to0.01 that is unrelated to either a sharp change in Fermi-surface topography or a magnetic instability. The implications of these results are discussed.

引用

页码：1 / 5

页数：5

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