Influence of annealing on microstructural and photoelectrochemical characteristics of CuSCN thin films via electrochemical process

被引：22

作者：

Huang, Mao-Chia ^{[1
]}

Wang, TsingHai ^{[2
]}

Tseng, Yao-Tien ^{[1
]}

Wu, Ching-Chen ^{[3
]}

Lin, Jing-Chie ^{[1
,4
]}

Hsu, Wan-Yi ^{[4
]}

Chang, Wen-Sheng ^{[3
]}

Chen, I-Chen ^{[1
]}

Peng, Kun-Cheng ^{[5
]}

机构：

[1] Natl Cent Univ, Inst Mat Sci & Engn, Jhongli 32001, Taiwan

[2] Natl Tsing Hua Univ, Dept Biomed Engn & Environm Sci, Hsinchu 30013, Taiwan

[3] Ind Technol Res Inst, Green Energy & Environm Res Labs, Hsinchu 310, Taiwan

[4] Natl Cent Univ, Dept Mech Engn, Jhongli 32001, Taiwan

[5] Mingchi Univ Technol, Dept Mat Engn, New Taipei City 24301, Taiwan

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2015年 / 622卷

关键词：

CuSCN; Annealing effect; Electrochemically deposition; Photoelectrochemistry; Water splitting; SOLAR-CELLS; SOLID-STATE; P-CUSCN; ZNO; ELECTRODEPOSITION; WATER; ELECTROLYTE; DEPOSITION; CONDUCTION; NANORODS;

D O I：

10.1016/j.jallcom.2014.10.147

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Thin films of p-type beta-CuSCN were deposited on indium-tin oxide glass substrates via electrochemical process. Various annealing temperatures (200, 300 and 400 degrees C) were taken into consideration. The influence of annealing temperature on structural, optical, electrical and photoelectrochemical characteristics of beta-CuSCN thin films were investigated. Results from X-ray diffraction indicated as-obtained beta-CuSCN thin film was in a hexagonal close pack crystal structure. We found that the crystallographic orientation changed and the optical energy band gap slightly increased with increasing annealing temperatures. These properties made CuSCN films annealed at 400 degrees C a better photoelectrochemical performance with photocurrent density of about -0.39 mA/cm(2) at -0.5 V vs. SCE. This value is about 5 times higher than the as-deposited CuSCN film. Observed higher photocurrent density is likely due to the intrinsic of a higher charge carrier concentration, and a lower resistance within CuSCN crystal and at CuSCN/electrolyte interface. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：669 / 675

页数：7

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