Mismatch in diffusion resistors caused by photolithography

被引：6

作者：

Hausser, S ^{[1
]}

Majoni, S ^{[1
]}

Schligtenhorst, H ^{[1
]}

Kolwe, G ^{[1
]}

机构：

[1] Philips Semicond GmbH, Ctr Technol, D-71034 Boblingen, Germany

来源：

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING | 2003年 / 16卷 / 02期

关键词：

CMOS; diffusion resistors; matching; photolithography;

D O I：

10.1109/TSM.2003.811584

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

During the qualification of a 0.35-mum CMOS process, it was observed that diffusion resistors showed a systematic mismatch, depending on the position on the wafer. The mismatch increased from the center of the wafer to the outer regions. Various experiments showed that the mismatch was caused by spinning the wafer during the resist development process. Changing this process eliminated the systematic diffusion resistor mismatch.

引用

页码：181 / 186

页数：6

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