Kinetics of photoluminescence in porous silicon

被引：0

作者：

Aksenov, VP ^{[1
]}

Gupta, A ^{[1
]}

Jain, VK ^{[1
]}

Miokhailova, GN ^{[1
]}

机构：

[1] Solid State Phys Lab, Delhi 110054, India

来源：

PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II | 2000年 / 3975卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photoluminescence (PL) kinetics was studied for porous silicon (PS). A very slow decay of PL was observed in PS under excitation by laser irradiation with wavelength of 0.53 mu m. The value of life-time was about 50 mu s. For explaining this experimental observation we propose a model, based on interaction of charges in silicon wires.

引用

页码：379 / 382

页数：4