400°C Formation of poly-SiGe on SiO2 by Au-induced lateral crystallization

被引：7

作者：

Kanno, H ^{[1
]}

Aoki, T ^{[1
]}

Kenjo, A ^{[1
]}

Sadoh, T ^{[1
]}

Miyao, M ^{[1
]}

机构：

[1] Kyushu Univ, Dept Elect, Fukuoka 8128581, Japan

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2005年 / 8卷 / 1-3期

关键词：

silicon germanium; metal-induced lateral crystallization; thin-film transistor; low-temperature growth;

D O I：

10.1016/j.mssp.2004.09.060

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Au-induced low-temperature (400 degreesC) crystallization of amorphous-Sil(1-x)Ge(x)(x: 0-1) thin films on SiO2 has been investigated. Although the growth velocity decreased with increasing Ge fraction, growth velocity exceeding 20 mum/h was obtained in all Ge fractions. As a result, strain-free poly-Si1-xGex with large areas (>20 mum) were obtained at a low temperature (400 degreesC). These new polycrystalline SiGe films on insulator could be used for advanced system in display and three-dimensional ULSI. (C) 2004 Elsevier Ltd. All rights reserved.

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页码：79 / 82

页数：4

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