Photoluminescence and carrier dynamics in InAs/InP quantum dots grown by selective area growth

被引：0
|
作者：
Pyun, S. H. [1 ]
Jeong, W. G. [1 ]
Nguyen, D. H. [2 ]
Park, J.
Jang, Y. D.
Lee, D.
Jang, J. W.
机构：
[1] Sungkyunkwan Univ, Dept Mat Sci & Engn, Suwon, South Korea
[2] Hanoi Univ, Hanoi, Vietnam
来源：
2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2 | 2009年
关键词：
D O I：
10.1109/LEOS.2009.5343095
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Using SiO2 masks with different stripe width, the luminescence wavelength of InAs/InP quantum dots has been tuned in a range as wide as 100 meV on a single wafer by selective area growth
引用
收藏
页码：151 / +
页数：2
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