Controlled Growth and Thickness-Dependent Conduction-Type Transition of 2D Ferrimagnetic Cr2S3 Semiconductors

被引:136
作者
Cui, Fangfang [1 ]
Zhao, Xiaoxu [2 ]
Xu, Junjie [1 ]
Tang, Bin [3 ,4 ]
Shang, Qiuyu [1 ]
Shi, Jianping [1 ]
Huan, Yahuan [1 ]
Liao, Jianhui [3 ,4 ]
Chen, Qing [3 ,4 ]
Hou, Yanglong [1 ]
Zhang, Qing [1 ]
Pennycook, Stephen J. [2 ]
Zhang, Yanfeng [1 ]
机构
[1] Peking Univ, Coll Engn, Dept Mat Sci & Engn, Beijing 100871, Peoples R China
[2] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117574, Singapore
[3] Peking Univ, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China
[4] Peking Univ, Dept Elect, Beijing 100871, Peoples R China
基金
中国博士后科学基金; 中国国家自然科学基金; 北京市自然科学基金;
关键词
chemical vapor deposition; conduction type transition; controlled growth; Cr2S3; MONOLAYER; OPTOELECTRONICS; FERROMAGNETISM; TRANSISTORS; WSE2;
D O I
10.1002/adma.201905896
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
2D magnetic materials have attracted intense attention as ideal platforms for constructing multifunctional electronic and spintronic devices. However, most of the reported 2D magnetic materials are mainly achieved by the mechanical exfoliation route. The direct synthesis of such materials is still rarely reported, especially toward thickness-controlled synthesis down to the 2D limit. Herein, the thickness-tunable synthesis of nanothick rhombohedral Cr2S3 flakes (from approximate to 1.9 nm to tens of nanometers) on a chemically inert mica substrate via a facile chemical vapor deposition route is demonstrated. This is accomplished by an accurate control of the feeding rate of the Cr precursor and the growth temperature. Furthermore, it is revealed that the conduction behavior of the nanothick Cr2S3 is variable with increasing thickness (from 2.6 to 4.8 nm and >7 nm) from p-type to ambipolar and then to n-type. Hereby, this work can shed light on the scalable synthesis, transport, and magnetic properties explorations of 2D magnetic materials.
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页数:8
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