Slow relaxation of grain boundary resistance in a ferromagnetic manganite

被引：9

作者：

Kozlova, N ^{[1
]}

Dörr, K ^{[1
]}

Eckert, D ^{[1
]}

Handstein, A ^{[1
]}

Skourski, Y ^{[1
]}

Walter, T ^{[1
]}

Müller, KH ^{[1
]}

Schultz, L ^{[1
]}

机构：

[1] IFW Dresden, D-01171 Dresden, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 93卷 / 10期

关键词：

D O I：

10.1063/1.1544455

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The resistance relaxation of a polycrystalline ferromagnetic La0.7Sr0.3MnO3 thin film has been studied. Time-dependent resistance data R(t), recorded after field pulses of 7 and 47 T, respectively, show a pronounced relaxation of approximately logarithmic type for 10 ms<t<20 s and temperatures T<100 K. The resistance relaxation has also been measured in a superconducting quantum interference device magnetometer, yielding similar relaxation rates. An unusual increase of the relaxation rate with decreasing temperature down to 4.2 K is observed. While polycrystalline samples show this type of relaxation, it is absent in an epitaxial film, indicating the origin in the grain boundary regions between misaligned grains. Slow relaxation might be caused by spin glass-like magnetic order at grain boundaries; however, no freezing temperature has been found down to 4.2 K. (C) 2003 American Institute of Physics.

引用

收藏

页码：8325 / 8327

页数：3

相关论文

共 19 条

[1] High-field magnetoresistance at interfaces in manganese perovskites [J].

Balcells, L ;

Fontcuberta, J ;

Martínez, B ;

Obradors, X .

PHYSICAL REVIEW B, 1998, 58 (22) :14697-14700

[2] Relaxation of La0.67Ca0.33MnO3 films resistance in pulsed high magnetic fields [J].

Balevicius, S ;

Vengalis, B ;

Anisimovas, F ;

Novickij, J ;

Tolutis, R ;

Kiprianovic, O ;

Pyragas, V ;

Tornau, EE .

JOURNAL OF LOW TEMPERATURE PHYSICS, 1999, 117 (5-6) :1653-1657

[3] Surface electronic structure and magnetic properties of doped manganites [J].

Calderon, MJ ;

Brey, L ;

Guinea, F .

PHYSICAL REVIEW B, 1999, 60 (09) :6698-6704

[4] Mixed-valence manganites [J].

Coey, JMD ;

Viret, M ;

von Molnár, S .

ADVANCES IN PHYSICS, 1999, 48 (02) :167-293

[5] Defect-induced spin disorder and magnetoresistance in single-crystal and polycrystal rare-earth manganite thin films [J].

Evetts, JE ;

Blamire, MG ;

Mathur, ND ;

Isaac, SP ;

Teo, BS ;

Cohen, LF ;

Macmanus-Driscoll, JL .

PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 1998, 356 (1742) :1593-1613

[6] Spin-polarized intergrain tunneling in La-2/Sr-3(1)/3MnO3 [J].

Hwang, HY ;

Cheong, SW ;

Ong, NP ;

Batlogg, B .

PHYSICAL REVIEW LETTERS, 1996, 77 (10) :2041-2044

[7]

KOZLOVA N, IN PRESS J MAGN MAGN

[8] The Dresden high-magnetic field laboratory -: overview and first results [J].

Krug, H ;

Doerr, M ;

Eckert, D ;

Eschrig, H ;

Fischer, F ;

Fulde, P ;

Groessinger, R ;

Handstein, A ;

Herlach, F ;

Hinz, D ;

Kratz, R ;

Loewenhaupt, M ;

Müller, KH ;

Pobell, F ;

Schultz, L ;

Siegel, H .

PHYSICA B, 2001, 294 (294-295) :605-611

[9] Intergrain magnetoresistance via second-order tunneling in perovskite manganites [J].

Lee, S ;

Hwang, HY ;

Shraiman, BI ;

Ratcliff, WD ;

Cheong, SW .

PHYSICAL REVIEW LETTERS, 1999, 82 (22) :4508-4511

[10] Large low-field magnetoresistance in La0.7Ca0.3MnO3 induced by artificial grain boundaries [J].

Mathur, ND ;

Burnell, G ;

Isaac, SP ;

Jackson, TJ ;

Teo, BS ;

MacManusDriscoll, JL ;

Cohen, LF ;

Evetts, JE ;

Blamire, MG .

NATURE, 1997, 387 (6630) :266-268