Strain and gettering in epitaxial silicon wafers

被引：3
作者：
Kirscht, FG
Shabani, MB
Yoshimi, T
Kim, SB
Snegirev, B
Wang, C
Williamson, L
Takashima, K
Taylor, P
Lange, D
机构：
[1] Mitsubishi Silicon Amer, Salem, OR 97303 USA
[2] Mitsubishi Mat Silicon Corp, Chiba 278, Japan
[3] Nippon Motorola Ltd, Fukushima 96935, Japan
来源：
SOLID STATE PHENOMENA | 1997年 / 57-8卷
关键词：
D O I：
10.4028/www.scientific.net/SSP.57-58.355
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
External gettering is assessed for epitaxial wafers with lightly and heavily doped substrates, Gettering variants include poly-Si films and mechanical damage. Relative lattice strain at wafer backsides is determined by X-ray diffraction, Relative Fe gettering capability is evaluated using atomic absorption spectroscopy. We find a correlation between initial backside strain in epitaxial wafers and external Fe gettering. Enhanced Fe incorporation into n-type epi layers of n/n(+) epitaxial wafers is observed.
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页码：355 / 363
页数：9
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