Dual-Gate Graphene FETs With fT of 50 GHz

被引：123

作者：

Lin, Yu-Ming ^{[1
]}

Chiu, Hsin-Ying ^{[1
]}

Jenkins, Keith A. ^{[1
]}

Farmer, Damon B. ^{[1
]}

Avouris, Phaedon ^{[1
]}

Valdes-Garcia, Alberto ^{[1
]}

机构：

[1] IBM TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 01期

关键词：

Access resistance; dual gate; field-effect transistor (FET); graphene; radio frequency (RF);

D O I：

10.1109/LED.2009.2034876

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A dual-gate graphene field-effect transistor is presented, which shows improved radio-frequency (RF) performance by reducing the access resistance using electrostatic doping. With a carrier mobility of 2700 cm(2)/V . s, a cutoff frequency of 50 GHz is demonstrated in a 350-nm-gate-length device. This f(T) value is the highest frequency reported to date for any graphene transistor, and it also exceeds that of Si MOS field-effect transistors at the same gate length, illustrating the potential of graphene for RF applications.

引用

收藏

页码：68 / 70

页数：3

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