10 Gb/s broadband silicon electro-optic absorption modulator

被引：11

作者：

Elshaari, Ali W. ^{[1
]}

Preble, Stefan F. ^{[1
]}

机构：

[1] Rochester Inst Technol, Kate Gleason Coll Engn, Rochester, NY 14623 USA

来源：

OPTICS COMMUNICATIONS | 2010年 / 283卷 / 14期

关键词：

ULTRALOW-ENERGY; COMPACT; POWER;

D O I：

10.1016/j.optcom.2010.03.048

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Here we propose a design for a novel broadband silicon electro-optic absorption modulator The device is simply a 100 mu m long silicon waveguide with a Schottky diode integrated in it. Modulation is achieved through free-carrier absorption, not interference effects, enabling operation over the entire bandwidth of the waveguide The high overlap between the modulated carrier density and the optical mode enables high speed (>10 Gb/s), small footprint and modulation depths of similar to 4.6 dB (C) 2010 Elsevier B.V. All rights reserved

引用

页码：2829 / 2834

页数：6

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