Fabrication of domain-inverted gratings in MgO:LiNbO3 by applying voltage under ultraviolet irradiation through photomask at room temperature

被引：39

作者：

Fujimura, A ^{[1
]}

Sohmura, T ^{[1
]}

Suhara, T ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Dept Elect, Suita, Osaka 5650871, Japan

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 09期

关键词：

D O I：

10.1049/el:20030492

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new and simple fabrication method of domain-inverted gratings in MgO:LiNbO3 is demonstrated. It was found that ultraviolet (UV) light irradiation reduces the voltage for inversion. Domain-inverted gratings of similar to15 mum period were fabricated by voltage application at room temperature under irradiation of UV light periodically-patterned using a photomask.

引用

页码：719 / 721

页数：3

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