Two-dimensional InGaAs quantum-dot arrays with periods of 70-100 nm on artificially prepared nanoholes

被引：21

作者：

Nakamura, Y ^{[1
]}

Ikeda, N ^{[1
]}

Ohkouchi, S ^{[1
]}

Sugimoto, Y ^{[1
]}

Nakamura, H ^{[1
]}

Asakawa, K ^{[1
]}

机构：

[1] Femtosecond Technol Res Assoc, Tsukuba, Ibaraki 3002635, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2004年 / 43卷 / 3A期

关键词：

quantum dots; quantum-dot array; InGaAs; nanohole; scanning tunneling microscopy; vertical alignment;

D O I：

10.1143/JJAP.43.L362

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated two-dimensional InGaAs quantum-dot (QD) arrays with periods of 70nm and 100nm, where the nucleation probability of QDs reached similar to100%. This regular QD array was realized by controlling the nucleation sites on artificially prepared nanohole arrays on GaAs (001) substrates using low-temperature deposition of In0.33Ga0.67As and subsequent annealing. On the regular QD array with the 100 nm periodicity, three InGaAs QD layers were stacked. A cross-sectional image of the stacked sample revealed vertical alignment of the QDs, which showed a clear photoluminescence peak at room temperature.

引用

页码：L362 / L364

页数：3

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