Te Inclusions in CZT Detectors: New Method for Correcting Their Adverse Effects

被引：51

作者：

Bolotnikov, Aleksey E. ^{[1
]}

Babalola, Stephen ^{[2
,3
]}

Camarda, Giuseppe S. ^{[1
]}

Cui, Yonggang ^{[1
]}

Egarievwe, Stephen U. ^{[4
]}

Hawrami, R. ^{[5
]}

Hossain, Anwar ^{[1
]}

Yang, Ge ^{[1
]}

James, Ralph B. ^{[1
]}

机构：

[1] Brookhaven Natl Lab, Upton, NY 11793 USA

[2] Fisk Univ, Nashville, TN 37208 USA

[3] Vanderbilt Univ, Nashville, TN 37235 USA

[4] Alabama A&M Univ, Normal, AL 35752 USA

[5] Radiat Monitoring Devices Inc, Watertown, MA 02472 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2010年 / 57卷 / 02期

关键词：

CdZnTe; crystal defects; radiation detectors; CDZNTE; DEFECTS; GROWTH;

D O I：

10.1109/TNS.2010.2042617

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Both Te inclusions and point defects can trap the charge carriers generated by ionizing particles in CdZnTe (CZT) detectors. The amount of charge trapped by point defects is proportional to the carriers' drift time and can be corrected electronically. In the case of Te inclusions, the charge loss depends upon their random locations with respect to the electron cloud. Consequently, inclusions introduce fluctuations in the charge signals, which cannot be easily corrected. In this paper, we describe direct measurements of the cumulative effect of Te inclusions and its influence on the response of CZT detectors of different thicknesses and different sizes and concentrations of Te inclusions. We also discuss a means of partially correcting their adverse effects.

引用

页码：910 / 919

页数：10

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