Tuning the band gap of semiconducting carbon nanotube by an axial magnetic field

被引：17

作者：

Fedorov, G. ^{[1
]}

Barbara, P. ^{[1
]}

Smirnov, D. ^{[2
]}

Jimenez, D. ^{[3
]}

Roche, S. ^{[4
,5
]}

机构：

[1] Georgetown Univ, Dept Phys, Washington, DC 20057 USA

[2] Florida State Univ, Natl High Magnet Field Lab, Tallahassee, FL 32310 USA

[3] Univ Autonoma Barcelona, Escola Engn, Dept Elect Engn, E-08193 Barcelona, Spain

[4] CSIC, ICN, CIN2, E-08193 Barcelona, Bellaterra, Spain

[5] INAC, SP2M, DSM, Commissariat Energie Atom, Grenoble, France

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 13期

关键词：

carbon nanotubes; electrical conductivity; energy gap; field effect transistors; semiconductor nanotubes; QUANTUM INTERFERENCE; ENERGY-GAP;

D O I：

10.1063/1.3360214

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the magnetic field dependence of transfer characteristics of a device fabricated in a configuration of a field-effect transistor with a conduction channel formed by a semiconducting multiwalled carbon nanotube. Our results unambiguously indicate that an axial magnetic field suppresses the band gap of the nanotube. Quantitative analysis of the data indicates linear dependence of the band gap on magnetic field as well as a linear splitting between the K and K(') subbands of the band structure of the nanotube.

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页数：3

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