Effect of Mn doping on the dielectric properties of BaZr0.2Ti0.8O3 ceramics

被引:72
作者
Cai, Wei [1 ,2 ]
Fu, Chunlin [1 ]
Gao, Jiacheng [2 ]
Deng, Xiaoling [1 ]
机构
[1] Chongqing Univ Sci & Technol, Sch Met & Mat Engn, Chongqing 401331, Peoples R China
[2] Chongqing Univ, Sch Mat Sci & Engn, Chongqing 400044, Peoples R China
关键词
TITANATE THIN-FILMS; BA(ZRXTI1-X)O-3 CERAMICS; SOLID-SOLUTIONS; TUNABILITY; TEMPERATURE;
D O I
10.1007/s10854-009-9913-4
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Pure and Mn-doped BaZr0.2Ti0.8O3 ceramics are prepared via the conventional solid state reaction method. The microstructures, dielectric properties, and diffuse transition of Mn-doped BaZr0.2Ti0.8O3 ceramics have been investigated. The results indicate that manganese ions enter the unit cell maintaining the perovskite structure of solid solution. The addition of manganese leads to the decrease of the Curie temperature. The dielectric loss of the Mn-doped BZT ceramics is lower than that of pure BZT ceramics, and decreases as Mn content increases. The diffuseness of the phase transition of Mn-doped BZT ceramics decreases with the increase of Mn content. There is no obvious frequency dispersion around the dielectric constant peaks for Mn-doped BZT ceramics. The coercive electric field and the remanent polarization decreases as Mn content increases.
引用
收藏
页码:317 / 325
页数:9
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