Irradiation-induced chemical disordering in ceramics: The case of SiC

被引：7

作者：

Koyanagi, Takaaki ^{[1
]}

机构：

[1] Oak Ridge Natl Lab, Mat Sci Technol Div, Oak Ridge, TN USA

来源：

JOURNAL OF NUCLEAR MATERIALS | 2022年 / 565卷

关键词：

Irradiation; Ceramics; Chemical disorder; SiC; SILICON-CARBIDE; NEUTRON-IRRADIATION; MICROSTRUCTURE DAMAGE; RAMAN-SPECTROSCOPY; POINT-DEFECTS; ION; EVOLUTION; AMORPHIZATION; CLUSTERS; SPECTRA;

D O I：

10.1016/j.jnucmat.2022.153766

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Chemical disordering is one feature of damage that occurs in irradiation environments and is common in ceramic compounds. This paper reviews irradiation-induced chemical disordering in SiC-based materials at elevated temperatures. The results were obtained using advanced analytical tools to characterize atomistic defects and to evaluate the chemistry of defect clusters and homonuclear bond structures. This paper demonstrates that chemical disordering is crucial to understanding microstructural stability and establishing a mechanistic modeling of microstructural evolution of irradiated SiC.(c) 2022 Elsevier B.V. All rights reserved.

引用

页数：7

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