Analysis of laser-induced contamination at 515 nm in the sub-ps/MHz regime

被引:2
|
作者
El Reaidy, Georges Gebrayel [1 ,2 ]
Gallais, Laurent [1 ]
机构
[1] Aix Marseille Univ, Inst Fresnel, Cent Marseille, CNRS, Marseille 20, France
[2] Aix Marseille Univ, LP3, CNRS, Marseille, France
关键词
laser damage; laser-induced contamination; ultrashort pulse lasers; INDUCED DAMAGE THRESHOLD; ORGANIC CONTAMINATION; DIELECTRIC MIRRORS; GROWTH; OPTICS;
D O I
10.1117/1.OE.60.3.031004
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We study laser-induced contamination (LIC) as a potential cause of optical losses and laser-induced damage of optical components for ultrashort pulse lasers with high average power in the MHz regime. Our work is conducted on dichroic mirrors designed for maximum reflection at 515 nm operated in ambient air. Based on the development of an experimental set-up for realtime monitoring of LIC and accelerated test protocols, we have conducted a parametric study on LIC development and studied its growth dynamics and morphology. We show that LIC is a main limitation of short-wavelength, high average power fs/ps lasers, with the formation of nanometric highly absorbing layers of carbonate compounds on the laser footprint, with evidence of thermal effects. It is also found that the last layer of the stack, at the interface between air and coating stack, is critical in the LIC growth which can open some perspectives for limitation of this effect. (C) 2020 Society of Photo-Optical Instrumentation Engineers (SPIE)
引用
收藏
页数:14
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