Nickel nanocrystals with HfO2 blocking oxide for nonvolatile memory application

被引：49

作者：

Yang, F. M. ^{[1
]}

Chang, T. C.

Liu, P. T.

Chen, U. S.

Yeh, P. H.

Yu, Y. C.

Lin, J. Y.

Sze, S. M.

Lou, J. C.

机构：

[1] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

[2] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan

[3] Natl Sun Yat Sen Univ, Inst Electroopt Engn, Kaohsiung 804, Taiwan

[4] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Kaohsiung 804, Taiwan

[5] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan

[6] Natl Chiao Tung Univ, Display Inst, Hsinchu 300, Taiwan

[7] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

[8] Natl Yunlin Univ Sci & Technol, GRad Sch Optoelect Engn, Yunlin 640, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 22期

关键词：

D O I：

10.1063/1.2743926

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A distributed charge storage with Ni nanocrystals embedded in the SiO2 and HfO2 layer has been fabricated in this study. The mean size and aerial density of the Ni nanocrystals are estimated to be about 5 nm and 3.9x10(12)/cm(2), respectively. The nonvolatile memory device with Ni nanocrystals exhibits 1 V threshold voltage shift under 4 V write operation. The device has a long retention time with a small charge lose rate. Besides, the endurance of the memory device is not degraded up to 10(6) write/erase cycles. (C) 2007 American Institute of Physics.

引用

页数：3

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