Preparation and characterization of p-type transparent conducting tin-gallium oxide films

被引：59
|
作者：
Huang, Yixian [1 ]
Ji, Zhenguo [1 ]
Chen, Chen [1 ]
机构：
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 2007年 / 253卷 / 11期
基金：
中国国家自然科学基金;
关键词：
DC magnetron sputtering; tin-gallium oxide; p-type conducting; transparent conducting films;
D O I：
10.1016/j.apsusc.2006.10.043
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
p-Type transparent conducting fin-gallium oxide (TGO) films were successfully fabricated on quartz substrates by DC magnetron sputtering of GaSn alloy films followed by thermal oxidation. XRD characterization indicated that the TGO films maintain rutile structure of the tin oxide (SnO2). UV-vis transmittance spectra indicated that the films have a transmittance higher than 85% in the visible region, with an optical band-gap around 3.8 eV. Hall effect measurement showed that electrical properties of the TGO films were dependent on oxidation temperature. Oxidation at too high or low temperature was unfavorable for p-type conduction. It is found that the optimum oxidation temperature for highest hole concentration (8.84 x 10(18) cm(-1)) was in the range of 600-650 degrees C. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：4819 / 4822
页数：4
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