Performance improvement of InAs/GaSb strained layer superlattice detectors by reducing surface leakage currents with SU-8 passivation

被引：49

作者：

Kim, H. S. ^{[1
]}

Plis, E. ^{[1
]}

Khoshakhlagh, A. ^{[1
]}

Myers, S. ^{[1
]}

Gautam, N. ^{[1
]}

Sharma, Y. D. ^{[1
]}

Dawson, L. R. ^{[1
]}

Krishna, S. ^{[1
]}

Lee, S. J. ^{[2
]}

Noh, S. K. ^{[2
]}

机构：

[1] Univ New Mexico, Dept Elect & Comp Engn, Ctr High Technol Mat, Albuquerque, NM 87106 USA

[2] Korea Res Inst Stand & Sci, Taejon 305340, South Korea

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 03期

关键词：

dark conductivity; gallium compounds; III-V semiconductors; indium compounds; infrared detectors; leakage currents; passivation; photodetectors; photodiodes; semiconductor superlattices;

D O I：

10.1063/1.3275711

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on SU-8 passivation for performance improvement of type-II InAs/GaSb strained layer superlattice detectors (lambda(cut-off)similar to 4.6 mu m). Optical and electrical behavior of SU-8 passivated and unpassivated devices was compared. The dark current density was improved by four orders of magnitude for passivated single diodes at 77 K. The zero bias responsivity and detectivity at 77 K was equal to 0.9 A/W and 3.5x10(12) Jones for SU-8 passivated single pixel diodes. FPA size diodes (24x24 mu m(2)) were also fabricated and they showed responsivity and detectivity of 1.3 A/W and 3.5x10(12) Jones, respectively at 77 K.

引用

页数：3

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