Ambient temperature characteristics of Schottky contacts on 4H-SiC aged in air at 350 °C

被引：5

作者：

Adedeji, Adetayo V. ^{[1
]}

Ahyi, Ayayi C. ^{[2
]}

Williams, John R. ^{[2
]}

Mohney, Suzanne E. ^{[3
]}

Scofield, James D. ^{[4
]}

机构：

[1] Elizabeth City State Univ, Dept Chem Geol & Phys, Elizabeth City, NC 27909 USA

[2] Auburn Univ, Dept Phys, Auburn, AL 36849 USA

[3] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

[4] USAF, Res Lab, Wright Patterson AFB, OH 45433 USA

来源：

SOLID-STATE ELECTRONICS | 2010年 / 54卷 / 07期

关键词：

Contact metallization; Harsh environment microelectronics; Schottky contact characteristics; Elevated temperature;

D O I：

10.1016/j.sse.2010.03.010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A metallization scheme suitable to explore the capability of 4H-SiC for high temperature applications was designed and fabricated on Schottky barrier diodes (SBDs). The device electrical characteristics measured at room temperature were monitored over 1500 h cumulative annealing in air at 350 degrees C. Schottky barrier device parameters were stable over the annealing period. Good and stable adhesion properties of the protective metallization stack on SIC and on SiO2 were reported as a function of duration of annealing as well. It was observed that platinum layer that was sputter-deposited at 250 degrees C as part of the metallization stack improved the adhesion properties of the metallization remarkably. Published by Elsevier Ltd.

引用

页码：736 / 740

页数：5

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