High efficiency monolithic gallium nitride distributed amplifier

被引：21

作者：

Green, BM

Lee, S

Chu, K

Webb, KJ

Eastman, LF

机构：

[1] Cornell Univ, Sch Elect Engn, Ithaca, NY 14853 USA

[2] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 2000年 / 10卷 / 07期

关键词：

circuit optimization; distributed amplifiers; MMIC;

D O I：

10.1109/75.856985

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first gallium-nitride monolithic distributed amplifier is demonstrated. A nonuniform design allows the removal of the drain line dummy load with a concomitant increase in efficiency. An optimized nonuniform design shows a 10% increase in efficiency over an optimized uniform design having the dummy termination.

引用

页码：270 / 272

页数：3

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