A multi-gate single-electron transistor model for circuit simulations by SPICE

被引：3
|
作者：
Yu, Y. S. [1 ]
机构：
[1] Hankyong Natl Univ, Dept Informat & Control Engn, Ansong 456749, South Korea
[2] Hankyong Natl Univ, Grad Sch Bioenvironm & Informat Technol, Ansong 456749, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2007年 / 50卷 / 03期
关键词：
single-electron transistor; equivalent circuit; MOSFET; Coulomb oscillation; SET summing gate;
D O I：
10.3938/jkps.50.739
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A new compact multi-gate single-electron transistor (MGSET) model for circuit simulations by SPICE is introduced. In addition to the multi-input gates, a random background charge Q(O) is included in the model. The developed model is based on a linearized equivalent circuit and is implemented to the SmartSpice made by Silvaco. The drain-source current (I-ds) versus gate-source voltage (V-gs) characteristics and the Id, versus drain-source voltage (V-ds) characteristics, calculated by using the model, reproduce those of a Monte-Carlo simulator within a 1% error. One simulation of SE-FET hybrid circuits, consisting of one MGSET and two MOSFETs, was successfully done.
引用
收藏
页码：739 / 743
页数：5
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