Double channel field effect transistors (DCT) and demonstration of static single transistor bit cell

被引：1

作者：

Wirbeleit, Frank ^{[1
]}

机构：

[1] GLOBALFOUNDR1ES, D-01109 Dresden, Germany

来源：

MICROELECTRONIC ENGINEERING | 2010年 / 87卷 / 10期

关键词：

MOS devices; MOSFETs; FET memory integrated circuits; Logic devices; Static memory cell; SRAM; Microelectronic technology;

D O I：

10.1016/j.mee.2009.12.065

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A double channel structure was implemented in standard field effect transistors (FET) by implants. The resulting transfer slopes of these modified FETs show a clear on and off-state as well as a local extreme in between, if the body is forced. Exploring the new functionality of these novel devices a static single transistor bit cell is built for demonstration, pin compatible to standard bit cells. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1992 / 1996

页数：5

共 6 条

[1] CUTINI J, 2007, NEXT GEN TECHNOLOGIE, P57
[2] GALUPMONTORO, 2007, MOSFET MODELING CIRC, P83
[3] Kahng D., 1963, U.S. patent, Patent No. [3,102,230, 3102230, 3102230 A]
[4] Field-induced interband tunneling effect transistor (FITET) with negative-differential transconductance and negative-differential conductance
Kim, KR
Kim, HH
Song, KW
Huh, JI
Lee, JD
Park, BG
[J]. IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2005, 4 (03) : 317 - 321
[5] PAUL J, 1999, IEEE T ELECTRON DEV, V46, P55
[6] PETERS L, 2003, 300 MM FABS NEED MOR, P32

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