Extraordinarily high drive currents in asymmetrical double-gate MOSFETs

被引：7
作者：
Fossum, JG [1 ]
Ren, ZB
Kim, K
Lundstrom, M
机构：
[1] Univ Florida, Gainesville, FL 32611 USA
[2] Purdue Univ, W Lafayette, IN 47907 USA
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2000年 / 28卷 / 5-6期
关键词：
double-gate MOSFET; scaled CMOS; quantum effects; charge coupling;
D O I：
10.1006/spmi.2000.0957
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Numerical simulation results derived from a Schrodinger-Poisson tool applied to scaled double-gate (DG) MOSFETs, supplemented by analytical characterizations of the pertinent physics, are presented to give insight concerning the near-ideal features of DG devices and to explain how the low-voltage drive current of the asymmetrical DG MOSFET, having only one predominant channel, can be comparable to, and even higher than, that of the symmetrical-gate counterpart designed to have the same off-state current. (C) 2000 Academic Press.
引用
收藏
页码：525 / 530
页数：6
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