Single-Electron Tunneling Based Turnstiles: Modeling and Applications

被引：0

作者：

Xiao, Ran ^{[1
]}

Chen, Chunhong ^{[1
]}

机构：

[1] Univ Windsor, Dept Elect & Comp Engn, Windsor, ON N9B 3P4, Canada

来源：

2013 13TH IEEE CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO) | 2013年

关键词：

MOS-TRANSISTORS; DEVICES; CMOS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a compact analytical model for single-electron tunneling (SET) based turnstiles. This model can accurately describe the process of tunneling events involved. The device characteristics produced by the model are verified by Monte-Carlo simulation with good agreement. Hybrid SET/MOS circuit co-simulations are successfully performed in Spectre simulator by implementing the proposed model with Verilog-A modeling language. Extensive simulation results show the advantages of realizing some application circuits using SET-based turnstiles.

引用

页码：77 / 82

页数：6

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