Swift heavy ion induced interface modification in metal/Ge systems

被引：0
|
作者：
Som, T
Satpati, B
Satyam, PV
Kabiraj, D
Gupta, A
Mishra, NC
机构：
[1] Inst Phys, Bhubaneswar 751005, Orissa, India
[2] Ctr Nucl Sci, New Delhi 110067, India
[3] Inter Univ Consortium DAE Facil, Indore 452017, Madhya Pradesh, India
[4] Utkal Univ, Dept Phys, Bhubaneswar 751004, Orissa, India
来源：
INDIAN JOURNAL OF PHYSICS AND PROCEEDINGS OF THE INDIAN ASSOCIATION FOR THE CULTIVATION OF SCIENCE | 2004年 / 78卷 / 08期
关键词：
swift heavy ion irradiation; alloy formation; electron microscopy;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
This paper reports on swift heavy ion induced interface modification in metal/Ge thin film bilayer systems. 100 MeV Au7+ ions have been used for irradiation of the UHV grown thin films of Co/Ge and Ni/Ge at three different temperatures of 100 K, 300 K and 385 K and with fluences in the range of 5 x 10(12) ions/cm(2) to 1 x 10(14) ionS/cm(2). Irradiation induced interfacial changes were studied by Rutherford backscattering spectrometry. The changes in the surface morphology and other structural aspects have been studied by transmission electron microscopy. Interface modification has been explained in terms of synergetic effect of electronic and nuclear energy loss processes.
引用
收藏
页码：815 / 818
页数：4
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