Preservation of Surface Conductivity and Dielectric Loss Tangent in Large-Scale, Encapsulated Epitaxial Graphene Measured by Noncontact Microwave Cavity Perturbations

被引：25

作者：

Rigosi, Albert F. ^{[1
]}

Glavin, Nicholas R. ^{[2
]}

Liu, Chieh-, I ^{[1
,3
]}

Yang, Yanfei ^{[1
,4
]}

Obrzut, Jan ^{[1
]}

Hill, Heather M. ^{[1
]}

Hu, Jiuning ^{[1
]}

Lee, Hsin-Yen ^{[1
,5
]}

Walker, Angela R. Hight ^{[1
]}

Richter, Curt A. ^{[1
]}

Elmquist, Randolph E. ^{[1
]}

Newell, David B. ^{[1
]}

机构：

[1] NIST, 100 Bur Dr, Gaithersburg, MD 20899 USA

[2] US Air Force, Res Lab, Mat & Mfg Directorate, Wright Patterson AFB, OH 45433 USA

[3] Natl Taiwan Univ, Grad Inst Appl Phys, Taipei 10617, Taiwan

[4] Univ Maryland, Joint Quantum Inst, College Pk, MD 20742 USA

[5] Theiss Res, La Jolla, CA 92037 USA

来源：

SMALL | 2017年 / 13卷 / 26期

关键词：

HEXAGONAL-BORON-NITRIDE; RESISTANCE STANDARD; WAFER-SCALE; DEVICES; LAYER; PERFORMANCE; DEPOSITION;

D O I：

10.1002/smll.201700452

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Regarding the improvement of current quantized Hall resistance (QHR) standards, one promising avenue is the growth of homogeneous monolayer epitaxial graphene (EG). A clean and simple process is used to produce large, precise areas of EG. Properties like the surface conductivity and dielectric loss tangent remain unstable when EG is exposed to air due to doping from molecular adsorption. Experimental results are reported on the extraction of the surface conductivity and dielectric loss tangent from data taken with a noncontact resonance microwave cavity, assembled with an air-filled, standard R100 rectangular waveguide configuration. By using amorphous boron nitride (a-BN) as an encapsulation layer, stability of EG's electrical properties under ambient laboratory conditions is greatly improved. Moreover, samples are exposed to a variety of environmental and chemical conditions. Both thicknesses of a-BN encapsulation are sufficient to preserve surface conductivity and dielectric loss tangent to within 10% of its previously measured value, a result which has essential importance in the mass production of millimeter-scale graphene devices demonstrating electrical stability.

引用

页数：7

共 34 条

[1] Seeding Atomic Layer Deposition of High-k Dielectrics on Epitaxial Graphene with Organic Self-Assembled Monolayers [J].