Interlayer ferromagnetism and high-temperature quantum anomalous Hall effect in p-doped MnBi2Te4 multilayers

被引:18
作者
Han, Yulei [1 ,2 ]
Sun, Shiyang [3 ]
Qi, Shifei [1 ,2 ,3 ]
Xu, Xiaohong [4 ,5 ]
Qiao, Zhenhua [1 ,2 ]
机构
[1] Univ Sci & Technol China, ICQD, Hefei Natl Lab Phys Sci Microscale, CAS Key Lab Strongly Coupled Quantum Matter Phys, Hefei 230026, Anhui, Peoples R China
[2] Univ Sci & Technol China, Dept Phys, Hefei 230026, Anhui, Peoples R China
[3] Hebei Normal Univ, Coll Phys, Shijiazhuang 050024, Hebei, Peoples R China
[4] Shanxi Normal Univ, Res Inst Mat Sci, Linfen 041004, Shanxi, Peoples R China
[5] Shanxi Normal Univ, Sch Chem & Mat Sci, Linfen 041004, Shanxi, Peoples R China
基金
中国博士后科学基金;
关键词
TOPOLOGICAL MATERIALS; REALIZATION; INSULATORS; STATE;
D O I
10.1103/PhysRevB.103.245403
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The interlayer antiferromagnetic coupling hinders the observation of quantum anomalous Hall effect in magnetic topological insulator MnBi2Te4. We demonstrate that interlayer ferromagnetism can be established by utilizing the p-doping method in MnBi2Te4 multilayers. In two septuple layers system, the interlayer ferromagnetic coupling appears by doping nonmagnetic elements (e.g., N, P, As, Na, Mg, K, and Ca), due to the redistribution of orbital occupations of Mn. We further find that Mg and Ca elements are the most suitable candidates because of their low formation energy. Although, the p-doped two septuple layers exhibit topologically trivial band structure, the increase of layer thickness to three (four) septuple layers with Ca (Mg) dopants leads to the formation of the quantum anomalous Hall effect. Our proposed p-doping strategy without introducing additional magnetic disorder not only makes MnBi2Te4 become an ideal platform to realize the high-temperature quantum anomalous Hall effect without external magnetic field, but also can compensate the electrons from the intrinsic n-type defects in MnBi2Te4.
引用
收藏
页数:10
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