IrO2 thin films deposited by DC magnetron sputtering method

被引：0

作者：

Wang, SJ ^{[1
]}

Ding, AL ^{[1
]}

Qiu, PS ^{[1
]}

He, XY ^{[1
]}

Luo, WG ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, Lab Funct Inorgan Mat, Shanghai 200050, Peoples R China

来源：

JOURNAL OF INORGANIC MATERIALS | 2000年 / 15卷 / 04期

关键词：

IrO2 thin film; DC magnetron reactive sputtering; thermal annealing;

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Iridium oxide (IrO2) thin films were successfully grown on SiI2/Si(100) substrate by a DC magnetron reactive sputtering method with an Ir target (99.9% purity). PZT ferroelectric thin films were deposited by a sol-gel method. The as-deposited thin films were annealed with a thermal annealing process, after that the films were highly directed at (110) or (200). The effect of sputtering parameters such as gun power, oxygen partial pressure (Ar/O-2) and growth temperature and annealing conditions on the crystalline nature and morphology of IrO2 thin films was discussed.

引用

页码：733 / 739

页数：7

共 14 条

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