InGaAs triangular barrier photodiodes for high-responsivity detection of near-infrared light

被引：0
作者：
Sugimura, Kazuya [1 ]
Ohmori, Masato [1 ]
Noda, Takeshi [2 ]
Kojima, Tomoya [1 ]
Kado, Sakunari [1 ]
Vitushinskiy, Pavel [1 ]
Iwata, Naotaka [1 ]
Sakaki, Hiroyuki [1 ,2 ]
机构：
[1] Toyota Technol Inst, Nagoya, Aichi 4688511, Japan
[2] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan
来源：
APPLIED PHYSICS EXPRESS | 2016年 / 9卷 / 06期
关键词：
PHOTO-DIODE; PHOTOTRANSISTORS; MODEL; GAAS;
D O I：
10.7567/APEX.9.062101
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
InGaAs triangular barrier (TB) structures of various barrier thicknesses have been formed on InP substrates. With them, we have fabricated TB photodiodes that yield a very high responsivity of 2.3 x 10(4)A/W at 100 K for the 1312 nm light of 320 fW power. By passivating the diode surface with polyimide, the dark current has been markedly reduced. Diodes with thicker barriers show higher sensitivity and responsivity, reflecting the enhancement of the barrier lowering effect by photogenerated holes. (C) 2016 The Japan Society of Applied Physics
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页数：4
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