共 19 条
[1]
DETERMINATION OF THE SURFACE TENSION AND SURFACE MIGRATION CONSTANTS FOR TUNGSTEN
[J].
PHYSICAL REVIEW,
1960, 117 (06)
:1452-1459
[2]
THE INFLUENCE OF SUBSTRATE GEOMETRY ON THE EMISSION PROPERTIES OF A LIQUID-METAL ION-SOURCE
[J].
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,
1986, 41 (04)
:335-346
[3]
ACTIVATION ENERGY FOR THE SURFACE MIGRATION OF TUNGSTEN IN THE PRESENCE OF A HIGH-ELECTRIC FIELD
[J].
PHYSICAL REVIEW,
1960, 119 (01)
:85-93
[4]
BIENFAIT M, 1966, P INT C CRYST GROWTH, P283
[5]
INSITU FABRICATION AND REGENERATION OF MICROTIPS FOR SCANNING TUNNELLING MICROSCOPY
[J].
JOURNAL OF MICROSCOPY-OXFORD,
1988, 152
:355-361
[7]
FUJITA S, 2007, THESIS MEIJO U
[8]
GOOD RH, 1956, HDB PHYSIK, V21, P181
[9]
Formation of three-dimensional silicon mounds on the Si(111) 7 x 7 surface using the tip of a scanning tunneling microscope
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
2001, 40 (08)
:5109-5115
[10]
SOME THEOREMS ON THE FREE ENERGIES OF CRYSTAL SURFACES
[J].
PHYSICAL REVIEW,
1951, 82 (01)
:87-93