3C-SiC p-n structures grown by sublimation on 6H-SiC substrates

被引：7

作者：

Lebedev, AA ^{[1
]}

Strel'chuk, AM ^{[1
]}

Davydov, DV ^{[1
]}

Savkina, NS ^{[1
]}

Tregubova, AS ^{[1
]}

Kuznetsov, AN ^{[1
]}

Solov'ev, VA ^{[1
]}

Poletaev, NK ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 2003年 / 37卷 / 04期

基金：

俄罗斯基础研究基金会;

关键词：

Silicon; Carbide; Magnetic Material; Silicon Carbide; Electromagnetism;

D O I：

10.1134/1.1568473

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Sublimation epitaxy in a vacuum has been employed to grow n- and p-type 3C-SiC layers on 6H-SiC substrates. Diodes have been fabricated on the basis of the p-n structure obtained, and their parameters have been studied by measuring their current-voltage and capacitance-voltage characteristics and by applying the DLTS and electroluminescence methods. It is shown that the characteristics of the diodes studied are close to those of diodes based on bulk 3C-SiC. A conclusion is made that sublimation epitaxy can be used to fabricate 3C-SiC p-n structures on substrates of other silicon carbide polytypes. (C) 2003 MAIK "Nauka/Interperiodica".

引用

页码：482 / 484

页数：3

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