Ultrafast nonlinear effects in hydrogenated amorphous silicon wire waveguide

被引:82
作者
Shoji, Yuya [1 ]
Ogasawara, Takeshi [1 ]
Kamei, Toshihiro [2 ]
Sakakibara, Youichi [3 ]
Suda, Satoshi [1 ]
Kintaka, Kenji [1 ]
Kawashima, Hitoshi [1 ]
Okano, Makoto [3 ]
Hasama, Toshifumi [1 ]
Ishikawa, Hiroshi [1 ]
Mori, Masahiko [3 ]
机构
[1] Natl Inst Adv Ind Sci & Technol, Network Photon Res Ctr, Tsukuba, Ibaraki 3058568, Japan
[2] Natl Inst Adv Ind Sci & Technol, Nanoelect Res Ctr, Tsukuba, Ibaraki 3058568, Japan
[3] Natl Inst Adv Ind Sci & Technol, Photon Res Inst, Tsukuba, Ibaraki 3058568, Japan
关键词
1.55; MU-M; FEMTOSECOND PULSES; PHOTONIC WIRES; MODULATION; ABSORPTION; DEVICES; GAIN;
D O I
10.1364/OE.18.005668
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We, for the first time, present the ultrafast optical nonlinear response of a hydrogenated amorphous silicon (a-Si:H) wire waveguide using femtosecond pulses. We show cross-phase and cross-absorption modulations measured using the heterodyne pump-probe method and estimate the optical Kerr coefficient and two-photon absorption coefficient for the amorphous silicon waveguide. The pumping energy of 0.8 eV is slightly lower than that required to achieve two-photon excitation at the band gap of a-Si:H (similar to 1.7 eV). An ultrafast response of less than 100 fs is observed, which indicates that the free-carrier effect is suppressed by the localized states in the band gap. (C) 2010 Optical Society of America
引用
收藏
页码:5668 / 5673
页数:6
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