107-GHz (Al,Ga)N/GaN HEMTs on Silicon With Improved Maximum Oscillation Frequencies

被引：47

作者：

Tirelli, Stefano ^{[1
]}

Marti, Diego ^{[1
]}

Sun, Haifeng ^{[1
]}

Alt, Andreas R. ^{[1
]}

Benedickter, Hansruedi ^{[1
]}

Piner, Edwin L. ^{[2
]}

Bolognesi, C. R. ^{[1
]}

机构：

[1] ETH, Electromagnet Fields & Microwave Elect Lab, Terahertz Elect Grp, CH-8092 Zurich, Switzerland

[2] Nitronex Corp, Durham, NC 27703 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 04期

关键词：

AlGaN/; GaN; high-electron mobility transistors (HEMTs); high-frequency performance; high-resistivity silicon (HR-Si); millimeter-wave transistors; GATE ALGAN/GAN HEMTS; GHZ;

D O I：

10.1109/LED.2009.2039847

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report high-speed fully passivated deep submicrometer (Al, Ga) N/GaN high-electron mobility transistors (HEMTs) grown on (111) high-resistivity silicon with current gain cutoff frequencies of as high as f(T) = 107 GHz and maximum oscillation frequencies reaching fMAX = 150 GHz. Together, these are the highest f(T) and fMAX values achieved for GaN-based HEMTs implemented on silicon substrates to date. The performance reported here is competitive with recently published results for similar geometry high-performance passivated HEMTs on semi-insulating silicon-carbide substrates.

引用

页码：296 / 298

页数：3

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